Prof. E. H. Yang, Stevens Institute of Technology
Ferromagnetism in Substitutionally Doped TMDs: Toward Spintronics and Bioelectronics
Prof. Yang’s group investigates two-dimensional (2D) transition metal dichalcogenides (TMDs) doped with transition metal atoms, targeting applications in spintronic memory and biosensing. In his Distinguished Lectures, he discusses the synthesis, doping, and ferromagnetism in Fe-doped monolayer TMDs, and focuses on the spin-orbit torque (SOT) switching. Materials such as those containing heavy metals with strong spin-orbit coupling and topological insulators with spin-momentum locking generate substantial spin currents when subjected to electrical fields. When paired with van der Waals (vdW) magnets, these materials enhance spin-torque transfer efficiency, with the strong perpendicular magnetic anisotropy proving particularly useful for spintronic applications. Thinner vdW magnets are found to improve energy efficiency by enabling closer interaction between the magnetic layers and spin-accumulated interfaces. In our prior work (Nature Communications, 11, 2034, 2020), his group introduced Fe-doped monolayer MoS2, which forms a 2D dilute magnetic semiconductor (DMS) capable of operating above room temperature, offering a promising solution for practical SOT applications. Building on this, his group recently demonstrated highly energy-efficient, field-free, deterministic, and non-volatile SOT switching in Fe-doped monolayer MoS2deposited on a platinum Hall bar structure. The use of 2D DMS monolayers represents the first demonstration of SOT switching at the true atomic monolayer limit. His work on MoS₂-based sensors designed to enhance the precision of infectious disease diagnoses will ultimately lead to the development of effective and accessible diagnostic tools.
